6 V, and the rectifying ratio is 24 at a voltage of 3 V. The revealed p-n junction-like I-V characteristic also demonstrates the successful integration of Sb in the ZnO microrod array. Figure 7 shows Savolitinib in vitro the measured photocurrent at various biases. At a reverse bias of -3 V, the reverse currents are 990 and 25 μA with and without the illumination of ultraviolet light, respectively. A nearly 40-fold current gain was demonstrated
on this device. Figure 6 I – V measurement of the ZnO homojunction device. The inset shows characterization of the ohmic contacts for the ZnO homojunction device. Figure 7 Photocurrent measurement of the ZnO homojunction device. Finally, the photoresponsivity of the ZnO homojunction device is shown in Figure 8. At a wavelength
shorter than 380 nm, the ZnO homojunction device behaves buy Wortmannin like a eFT-508 mouse photodetector when a negative voltage between -1 and -3 V was applied. The responsivity of the ZnO p-n diode increases when more negative voltage was applied. Our results therefore suggest that the ZnO homojunction device has an application in photodetectors in the ultraviolet region [23, 24]. Figure 8 Photoresponsivity as a function of wavelength of the incident light at different reverse biases. Conclusions In this work, a high-quality Sb-doped ZnO microrod array was synthesized by electrodeposition. In Sb-doped ZnO, the shift of the XRD peak from that of the intrinsic ZnO was attributed to the increase of the lattice constant due to BCKDHB the replacement of a Zn atom by the Sb atom. In the case of the Sb-doped ZnO microrod array, the PL measurement indicated an acceptor-related photoemission. Strong violet luminescence at room temperature was observed since the Sb dopants would substitute Zn sites, instead of O sites, (SbZn) to form a complex with two VZn, which is the
SbZn-2VZn complex. This SbZn-2VZn complex has lower formation energy and acts as a shallow acceptor, which can induce a strong violet luminescence. In the I-V measurement, the diode-like behavior of the ZnO homojunction device indicated the successful integration of antimony atoms by electrodeposition. The nearly 40-fold current gain of the photoresponsivity of the ZnO homojunction device, acting like a p-n diode, indicates a potential application in photodetectors operating at the ultraviolet wavelength region. Acknowledgements This work was funded by the NSC, Taiwan (grant no. NSC 100-2112-M-002-017-MY3). References 1. Chu S, Lim JH, Mandalapu LJ, Yang Z, Li JL: Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes. Appl Phys Lett 2008, 92:152103.CrossRef 2. Mandalapu LJ, Yang Z, Xiu FX, Zhao DT, Liu JL: Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection. Appl Phys Lett 2006, 88:092103.CrossRef 3.